N-Channel Junction Silicon FET

FEATUREs
· Adoption of FBET process.
· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp.
· Common source.