NPN Epitaxial Planar Silicon Transistor
FEATUREs
• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package.
APPLICATIONs
• High-speed switching applications (switching regulator, driver circuit).