F12NK60Z(2005) 데이터시트 - STMicroelectronics
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F12NK60Z
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STMicroelectronics
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
General Features
■ TYPICAL RDS(on) = 0.53 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
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제조사
N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH™ MOSFET
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N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2003 )
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N-CHANNEL 1000V - 1.60Ω - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH™ MOSFET
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N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET
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N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET
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N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
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N-CHANNEL 700V - 1.5Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET ( Rev : 2005 )
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