EPB025A 데이터시트 - Excelics Semiconductor, Inc.
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EPB025A
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Excelics Semiconductor, Inc.
Low Noise High Gain Heterojunction FET
• TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
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