DC-6GHz High Efficiency Heterojunction Power FET
• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER
• 17.0dB TYPICAL POWER GAIN AT 2GHz
• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
• +27dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY