GENERAL DESCRIPTION
   The EN39SL160AH/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 words. Any word can be programmed typically in 8µs.The EN39SL160AH/L features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.

FEATURES
• Single power supply operation
   - Full voltage range:1.65-1.95 volt for read and
      write operations.
   - Ideal for battery-powered applications.
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5
   MHz)
   - 5 mA typical active read current
   - 15 mA typical program/erase current
   - 0.2 μA typical standby current
• Uniform Sector Architecture:
   - 512 sectors of 2-Kword
   - 32 blocks of 32-Kword
   - Any sector or block can be erased individually
• WP#/ACC Input pin:
   - Write protect (WP#) function allows protection
      the first or last blocks, regardless of block
      protect status
   - Acceleration (ACC) function acceleration
      program timing.
• Block Group protection:
   - Hardware locking of blocks to prevent
      program or erase operations within individual
      blocks
   - Additionally, temporary Block Unprotect
      allows code changes in previously locked
      blocks.
• High performance program/erase speed
   - Word program time: 8µs typical
   - Sector erase time: 90ms typical
   - Block erase time: 180ms typical
   - Chip erase time: 4s typical
• JEDEC Standard Embedded Erase and
   Program Algorithms
• JEDEC standard DATA# polling and toggle
   bits feature
• Single Sector, Block and Chip Erase
• Chip Unprotect Mode
• Erase Suspend / Resume modes:
   Read or program another Sector/Block during
   Erase Suspend Mode
• Support JEDEC Common Flash Interface
   (CFI)
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
• Package Options
   - 48-ball 6mm x 8mm TFBGA
   - 48-ball 4mm x 6mm WFBGA
• Industrial temperature Range