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EN25F40-100GC 데이터시트 - Eon Silicon Solution Inc.

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EN25F40-100GC

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33 Pages

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466.3 kB

제조사
Eon
Eon Silicon Solution Inc. Eon

GENERAL DESCRIPTION
The EN25F40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.


FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 4 Mbit Serial Flash
- 4 M-bit/512 K-byte/2048 pages
- 256 bytes per programmable page
•High performance
- 100MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 128 sectors of 4-Kbyte
- 8 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical 
- Block erase time 800ms typical
- Chip erase time: 5 Seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
•Package Options 
- 8 pins SOP 150mil body width  - 8 pins SOP 200mil body width 
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
•Commercial and industrial temperature Range

 

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