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EM39LV010 데이터시트 - ELAN Microelectronics

EM39LV010 image

부품명
EM39LV010

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page
23 Pages

File Size
278 kB

제조사
EMC
ELAN Microelectronics EMC

General Description
The EM39LV010 is a 1M bits Flash memory organized as 128K x 8 bits. The EM39LV010 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV010 provides a typical Byte-Program time of 11 µsec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. 


FEATUREs
◾ Single Power Supply
   Full voltage range from 2.7 to 3.6 volts
   for both read and write operations
◾ Sector-Erase Capability
   Uniform 4Kbyte sectors
◾ Read Access Time
   Access time: 45, 70 and 90 ns
◾ Power Consumption
   Active current: 15 mA (Typical)
   Standby current: 1 µA (Typical)
◾ Erase/Program Features
   Sector-Erase Time: 40 ms (Typical)
   Chip-Erase Time: 40 ms (Typical)
   Byte-Program Time: 11µs (Typical)
   Chip Rewrite Time: 1.5 seconds (Typical)
◾ Automatic Write Timing
   Internal VPP Generation
◾ End-of-Program or End-of-Erase
   Detection
   Data# Polling
   Toggle Bit
◾ CMOS I/O Compatibility
◾ JEDEC Standard
   Pin-out and software command sets
   compatible with single-power supply Flash
   memory
◾ High Reliability
   Endurance cycles: 100K (Typical)
   Data retention: 10 years
◾ Package Option
   32-lead PLCC
   32-pin TSOP
   48-pin FBGA


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