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EBE10UE8ACFA-6E-E 데이터시트 - Elpida Memory, Inc

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EBE10UE8ACFA-6E-E

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Elpida
Elpida Memory, Inc Elpida

Features
• Double-data-rate architecture; two data transfers per clock cycle
• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
• DQS is edge-aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation

 

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제조사
1GB Unbuffered DDR2 SDRAM DIMM
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1GB Unbuffered DDR2 SDRAM DIMM
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1GB Unbuffered DDR2 SDRAM DIMM
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1GB Registered DDR2 SDRAM DIMM
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1GB Registered DDR2 SDRAM DIMM
Elpida Memory, Inc
1GB Registered DDR2 SDRAM DIMM
Elpida Memory, Inc
1GB Registered DDR2 SDRAM DIMM
Elpida Memory, Inc
1GB Registered DDR2 SDRAM DIMM
Elpida Memory, Inc
1GB Registered DDR2 SDRAM DIMM
Elpida Memory, Inc

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