DTDG14GPT100 데이터시트 - ROHM Semiconductor
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DTDG14GPT100
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제조사
ROHM Semiconductor
Features
1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)
2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA)
3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load.
Structure
NPN digital transistor (with single built resistor and zener diode)
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제조사
60V/1A Digital Transistor (with built-in resistor and zener diode) ( Rev : 2019 )
ROHM Semiconductor
1A/60V Digital Transistor (with built-in resistor and zener diode) ( Rev : 2015 )
ROHM Semiconductor
60V /1A Digital Transistor (with built-in resistor and zener diode)
ROHM Semiconductor
60V/1A Digital Transistor (with built-in resistor and zener diode)
ROHM Semiconductor
1A / 60V Digital transistor (with built-in resistors and zener diode) ( Rev : RevB )
ROHM Semiconductor
1A / 60V Digital transistor (with built-in resistors and zener diode) ( Rev : 2018 )
ROHM Semiconductor
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