Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• DC-DC Converters
• Power management functions

FEATUREs and Benefits
• N-Channel MOSFET
• Low On-Resistance:
   • 3.0 Ω @ 4.5V
   • 4.0 Ω @ 2.5V
   • 6.0 Ω @ 1.8V
   • 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.05V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package, 0.4mm Maximum Package
   Height
• ESD Protected Gate
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability