Description
This new series of GaAs Schottky barrier diodes offer high performance at commercial market prices. They are designed for low junction capacitance, as well as low series resistance.Diodes are designed for MIC work (hard and soft substrates), but the leadless design eliminates the problems associated with mounting of beam lead diodes.

FEATUREs
■ Designed for High Volume Designs
■ High Frequency (20–100 GHz)
■ Exceeds Environmental Requirements for MIC & Hybrid Applications
■ Designed for Low Junction Capacitance and Low Series Resistance
■ Applications Include PCN Mixers and Circuits, As Well As Low Power, Fast Switching
■ Low Parasitic Flip Chip Configuration