Functional Description
The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors.

FEATUREs
• Fast access times: 6.0, 6.5, 7.0, and 8.0ns
• Fast clock speed: 150, 133, 117, and 100MHz
• Fast OE access times: 3.5 ns and 4.0 ns
• Optimal for depth expansion (one cycle chip deselect to eliminate bus contention)
• 3.3V –5% and +10% power supply
• 3.3V or 2.5V I/O supply
• 5V tolerant inputs except I/Os
• Clamp diodes to VSS at all inputs and outputs
• Common data inputs and data outputs
• Byte Write Enable and Global Write control
• Multiple chip enables for depth expansion: A package version and two chip enables for BG and AJ package versions
• Address pipeline capability
• Address, data, and control registers
• Internally self-timed Write cycle
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down feature available using ZZ mode or CE deselect.
• JTAG boundary scan for BG and AJ package version
• Low-profile 119-bump 14-mm × 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages