Functional Description
The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits.

FEATUREs
■ High Speed
    ❐ tAA = 15 ns
■ Low Active Power
    ❐ ICC = 150 mA at 67 MHz
■ Low complementary metal oxide semiconductor (CMOS) Standby Power
    ❐ ISB2 = 25 mA
■ Operating voltages of 1.7 V to 2.2 V
■ 1.5 V data retention
■ Automatic power-down when deselected
■ Transistor-transistor logic (TTL) compatible inputs and outputs
■ Easy memory expansion with CE1 and CE2 features
■ Available in Pb-free 54-pin thin small outline package (TSOP) Type II package and 48-ball Very Fine-Pitch Ball Grid Array (VFBGA)