Description
The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.

FEATUREs
• Fast cycle time (Cycle) (Frequency)
    CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz
• Inputs and outputs are GTL/HSTL compatible
• Controlled Impedance Driver
• Single 3.3V power supply: 3.3V±0.15V
• Byte-write possible
• OE asynchronization
• JTAG test circuit
• Package 119TBGA
• 4 kinds of synchronous operation mode
    Register-Register mode (R-R mode)
    Register-Flow Thru mode (R-F mode)
    Register-Latch mode (R-L mode)
    Dual clock mode (D-C mode)

Function
    65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM