CPD96V(2006) 데이터시트 - Central Semiconductor
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CPD96V
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 20 x 20 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Area 16 x 16 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 12,000Å
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Schottky Diode High Current, Low VF Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
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