CPD83V 데이터시트 - Central Semiconductor
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CPD83V
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 11 x 11 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Area 3.35 x 3.35 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au-As - 13,000Å
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