CPD66X 데이터시트 - Central Semiconductor
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CPD66X
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Central Semiconductor
PROCESS DETAILS
Die Size 17.5 x 17.5 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Area 7.9 MILS DIAMETER
Top Side Metalization Al - 30,000Å
Back Side Metalization Au-As - 13,000Å
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