CPD48 데이터시트 - Central Semiconductor
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CPD48
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 14 x 14 MILS
Die Thickness 9.0 MILS
Anode Bonding Pad Area 9.0 x 9.0 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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