CP709(2006) 데이터시트 - Central Semiconductor
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CP709
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 41.3 x 41.3 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 9.5 x 9.2 MILS
Emitter Bonding Pad Area 12.8 x 10.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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