CP392V 데이터시트 - Central Semiconductor
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CP392V
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 11 x 11 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 3.7 x 3.7 MILS
Emitter Bonding Pad Area 3.7 x 3.7 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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제조사
Smal Signal Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2010 )
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip ( Rev : 2002 )
Central Semiconductor
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