Central Semiconductor - CP289 데이터시트 PDF, 핀배열, 회로도

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CP289 데이터시트 - Central Semiconductor

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CP289

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Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip

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PROCESS DETAILS

Die Size 167 x 167 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 59 x 29 MILS
Emitter Bonding Pad Area 64 x 28 MILS
Top Side Metalization Al - 45,000Å
Back Side Metalization Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å

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