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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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CP285 데이터시트 - Central Semiconductor

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CP285

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Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS

   Die Size 105 x 105 MILS
   Die Thickness 9.5 MILS
   Base Bonding Pad Area 32 x 22 MILS
   Emitter Bonding Pad Area 33 x 24 MILS
   Top Side Metalization Al - 45,000Å
   Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)


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