CP207 데이터시트 - Central Semiconductor
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CP207
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 9.0 x 14 MILS
Die Thickness 8.0 MILS
Base Bonding Pad Area 2.7 x 2.7 MILS
Emitter Bonding Pad Area 2.7 x 2.7 MILS
Top Side Metalization Al - 13,000Å
Back Side Metalization Au - 6,000Å
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Small Signal Transistor PNP - Saturated Switch Transistor Chip ( Rev : 2002 )
Central Semiconductor
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