CP178 데이터시트 - Central Semiconductor
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CP178
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Central Semiconductor
PROCESS DETAILS
Die Size 131 x 131 MILS
Die Thickness 12.5 ±1.0 MILS
Emitter Bonding Pad Area 27 x 36 MILS
Base Bonding Pad Area 20 x 37 MILS
Top Side Metalization Al - 50,000Å
Back Side Metalization Ag - 10,000Å
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