Small Signal Transistor
NPN - High Current Transistor Chip

PROCESS DETAILS
   Process                               EPITAXIAL PLANAR
   Die Size                               40 x 40 MILS
   Die Thickness                      7.1 MILS
   Base Bonding Pad Area      7.9 x 8.7 MILS
   Emitter Bonding Pad Area   9.0 x 14 MILS
   Top Side Metalization          Al - 30,000Å
   Back Side Metalization        Au-As - 13,000Å