HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

IC ································································1200A
VCES ··························································4500V
1-element in a pack
Insulated type
LPT-IGBT / Soft Recovery Diode
AlSiC baseplate

APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers