GENERRAL DESCRIPTION
   This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.

FEATURE
● High-Side Switching 
● Low On-Resistance
● Low Threshold 
● Fast Switching Speed

APPLICATION
● Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories 
● Battery Operated Systems
● Power Supply Converter Circuits 
● Load/Power Switching Cell Phones, Pagers