24.5-26.5GHz High Power Amplifier
GaAs Monolithic Microwave IC

Description
The  CHA5295  is  a  high  gain  three-stage monolithic high power amplifier. It is designed for
a  wide  range  of  applications,  from  military  to commercial  communication  systems. The
backside of the chip is both RF and DC grounds. This help simplifies the assembly process.
The  circuit  is  manufactured  with  a  PM-HEMT process,  0.25µm  gate  length,  via  holes  through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.

Main Features
■Performances : 24.5-26.5GHz
■31dBm output power @ 1dB comp.
■18 dB ±1dB gain
■DC power consumption, 800mA @ 6V
■Chip size :  4.01 x 2.52 x 0.05 mm