General Description
Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon Nitride passivation. The CF001-01 provides high gain up to 26 GHz. It is suitable for general purpose and driver amplifier applications with up to +21 dBm power from a single FET. This device can also be used in oscillator applications. The CF001-01 is available in chip form and is suitable for airborne, shipboard and ground-based equipment. The devices are 100% DC tested and every wafer is qualified based on sample RF and reliability testing.

FEATUREs
● High Gain: Usable to 44 GHz
● P1dB Power: 21 dBm
● Wfer Qualification Procedure
● Customer Wafer Selection Available