Description
The A58 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency
range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

FEATUREs
• HIGH DYNAMIC RANGE: +116 dBm (1 MHz Band)
• HIGH OUTPUT POWER: +19 dBm (TYP.)
• HIGH THIRD ORDER I.P. + 34.0 dBm (TYP.)
• LOW NOISE: 4.0 dB (TYP.)