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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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CA3127M 데이터시트 - Renesas Electronics

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CA3127M

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High Frequency NPN Transistor Array

The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.


FEATUREs
• Gain Bandwidth Product (fT) . . . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure. . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
• Pb-Free Plus Anneal Available (RoHS Compliant)


APPLICATIONs
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers

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