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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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C5122 데이터시트 - Toshiba

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C5122

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  1998  

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High-Voltage switching Applications
​​​​​​​
•  High breakdown voltage: VCEO= 400 V
•  Low saturation voltage:  VCE (sat)= 0.4 V (typ.) 
                                          (IC= 20 mA, IB= 0.5 mA)

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TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
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