C2611 데이터시트 - New Jersey Semiconductor
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C2611
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New Jersey Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
• Good Linearity of hFE
• Low Saturation Voltage
APPLICATIONS
• Designed for use in high frequency high voltage amplifier
and TV viedo output applications.
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