N-Channel Enhancement Mode Power MOS Transistor

● Typical RDS(on)=2.5 Ω
● AVALANCHE RUGGED TECHNOLOGY
● 100% AVALANCHE TESTED
● REPETITIVE AVALANCHE DATA AT 100℃
● LOW INPUT CAPACITANCE
● LOW GATE CHARGE
● APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
● HIGH CURRENT, HIGH SPEED SWITCHING
● SWITCH MODE POWER SUPPLIES (SMPS)
● CONSUMER AND INDUSTRIAL LIGHTING
● DC-AC INVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLY (UPS)