제조사
![Harris](/logo/Harris.png)
Harris Semiconductor
![Harris](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
FEATUREs
• 12A, 100V
•rDS(ON)= 0.200Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
12A, 80Vand 100V,0.200 Ohm, N-Channel Power MOSFETs
New Jersey Semiconductor
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
Intersil
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Intersil
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
Intersil
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
Intersil
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs ( Rev : 1999 )
Fairchild Semiconductor
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
Intersil
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
Intersil
23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
Intersil