•SEMEFAB DESIGNED AND DIFFUSED DIE
•HIGH VOLTAGE
•FAST SWITCHING (tf = 40ns)
•EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
•HIGH ENERGY RATING
•EFFICIENT POWER SWITCHING
•MILITARY AND HI–REL OPTIONS

FEATURES
• Multi–base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improved control of high voltages.