General Description
The BU4S11G2 is a 2-input NAND gate. An inverter-based buffer is incorporated at the gate output to improve I/O transmission characteristics, and it minimizes a variation in the propagation delay time caused by an increase in the load capacitance.

FEATUREs
■ Low power consumption
■ High noise immunity
■ Wide operating supply voltage range
■ High input impedance
■ High fan out
■ Input can be directly driven 2 L-TTL inputs or 1 LS-TTL
■ Buffered output