NPN Epitaxial Planar TransistorAUDIO MUTING APPLICATION
FEATUREs• High Emitter-Base voltage, VEBO=12V(min).• High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA.• Low On-resistance, Ron=0.6Ω (max)@IB=1mA.• Pb-free and halogen-free package.