BSZ900N15NS3G(2010) 데이터시트 - Infineon Technologies
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BSZ900N15NS3G
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Infineon Technologies
OptiMOS™3 Power-Transistor
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
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