General description
Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service.

FEATUREs and benefits
■ Interchangeable drain and source connections
■ Small package

APPLICATIONs
■ Low-power, chopper or switching applications
■ Thick and thin-film circuits