BSM300GA170DN2E3166 데이터시트 - Infineon Technologies
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BSM300GA170DN2E3166
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Infineon Technologies
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• RG on,min = 5.6 Ohm
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