Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:
   BSH121 in SOT323.

FEATUREs
■ TrenchMOS™ technology
■ Very fast switching
■ Low threshold voltage
■ Subminiature surface mount package.

APPLICATIONs
■ Battery management
■ High speed switch
■ Logic level translator.