Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
BSH108 in SOT23.
FEATUREs
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible
■ Subminiature surface mount package.
APPLICATIONs
■ Battery management
■ High speed switch
■ Low power DC to DC converter.