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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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BS62LV4000TC70 데이터시트 - Brilliance Semiconductor

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BS62LV4000TC70

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BSI
Brilliance Semiconductor BSI

„GENERAL DESCRIPTION
The BS62LV4000 is a high performance, very low  power  CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70ns in 3V operation. Easy  memory  expansion is provided by  an  active LOW  chip enable (CE), and  active LOW output  enable (OE) and three-state output drivers.

„FEATURES
• Wide Vcc operation voltage : 2.7V ~ 3.6V
• Very low power consumption :
   Vcc = 3.0V C-grade: 20mA (Max.) operating current
                  I -grade: 25mA (Max.) operating current
                 0.5uA (Typ.) CMOS standby current
• High speed access time :
  -70 70ns (Max) at Vcc = 3.0V
  -10 100ns (Max) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options

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Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit ( Rev : 2004 )
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor

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