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BS616LV4016 데이터시트 - Brilliance Semiconductor

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BS616LV4016

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10 Pages

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256.5 kB

제조사
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616LV4016 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 2.7V/85oC.


FEATURES
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 25mA (@55ns) operating current
                I -grade: 27mA (@55ns) operating current
               C-grade: 17mA (@70ns) operating current
                I -grade: 18mA (@70ns) operating current
                 0.45uA (Typ.) CMOS standby current
• High speed access time :
    -55 55ns (Max.) at Vcc = 2.7~3.6V / 85oC
    -70 70ns (Max.) at Vcc = 2.4~3.6V / 85oC
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin

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