DESCRIPTION
The  BS616L V2016  is  a  high  performance,  very  low  power  CMOS Static Random  Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current of 0.1uA at 3.0V/25^OC and maximum access time of 55ns at 3.0V/85^OC.

FEATURES
  WideVCC operation voltage : 2.4V ~ 5.5V
  Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  30mA (Max.)  at 55ns
                                                        2mA (Max.)  at 1MHz
                         Standby current :  0.1uA (Typ.)  at 25^OC
   VCC = 5.0V  Operationcurrent :  62mA (Max.)  at 55ns
                                                       8mA (Max.)  at 1MHz
                         Standby current :  0.6uA (Typ.)  at 25^OC
  Highspeed access time:
   -55  55ns(Max.) at VCC=3.0~5.5V
   -70  70ns(Max.) at VCC=2.7~5.5V
  Automatic power down whenchip is deselected
  Easy expansion with CE and OE options
  I/O Configuration x8/x16selectable by LB and UB pin.
  Threestate outputs and TTLcompatible
  Fully static operation
  Data retentionsupply voltage as low as 1.5V