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BR34E02NUX-WTR 데이터시트 - ROHM Semiconductor

BR34E02-W image

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BR34E02NUX-WTR

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20 Pages

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1.2 MB

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ROHM
ROHM Semiconductor ROHM

●Description
BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)

●Features
・256×8 bit architecture serial EEPROM
・Wide operating voltage range: 1.7V-3.6V
・Two-wire serial interface
・High reliability connection using Au pads and Au wires
・Self-Timed Erase and Write Cycle
・Page Write Function (16byte)
・Write Protect Mode
   Settable Reversible Write Protect Function: 00h-7Fh
   Write Protect 1 (Onetime Rom)      : 00h-7Fh
   Write Protect 2 (Hardwire WP PIN)   : 00h-FFh
・Low Power consumption
   Write  (at 1.7V ) :  0.4mA (typ.)
   Read  (at 1.7V ) :  0.1mA(typ.)
   Standby   ( at 1.7V )  :  0.1μA(typ.)
・DATA security
  Write protect feature (WP pin)    Inhibit to WRITE at low VCC
・Compact package: TSSOP-B8, VSON008X2030
・High reliability fine pattern CMOS technology
・Rewriting possible up to 1,000,000 times
・Data retention: 40 years
・Noise reduction Filtered inputs in SCL / SDA  
・Initial data FFh at all addresses

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