DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.

FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures excellent reliability.