DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
   common mode inductance
• Designed for broadband operation (1.8 to 2.0 GHz)
• Internal input and output matching for high gain and
   efficiency.

APPLICATIONS
• Common source class-AB operation for PCN and PCS
   applications in the 1800 to 2000 MHz frequency range.